国家/地区 美国（6） 中国（3） 德国（2） 欧洲专利局（EPO）（2） 日本（2） 韩国（2） 世界知识产权组织（2）
IPC部 B（6） H（3） C（2）
IPC大类 B05（6） H01（3） B32（2）
C01（2）
IPC小类 B05D（6）
IPC B05D005/12（3） B05D003/02（2） C01B031/02（2）
发明人
公开年 2010（6）
申请年 2008（6）
专利权人

Electrostatic deposition of graphene on substrate involves applying voltage across graphite sample secured to positive electrode and substrate placed over a second electrode, so as to transfer graphene from graphite sample to the substrate.

SUMANASEKERA G, SIDOROV A N, OUSEPH P J, YAZDANPANAH M M, COHN R W, JALILIAN R

Electrical circuit structure comprises layers of graphene formed one another, first and second electrical contacts each electrically connected with single graphene layer, electrically insulating layer, and electrically insulting material.

MARINERO E E

Manufacturing carbon nanotube-, fullerene- and/or graphene-containing coating for use as electromechanical component or lead frame, involves applying carbon nano-tubes, fullerene or graphene on tin-containing coating by mechanical treatment.

ADLER U, BURESCH I, PRIGGEMEYER S, RODE D, SCHMIDT H, ROHDE D

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C

Atomic steps elimination method for silicon carbide surface for graphene film of electronic device, involves contacting silicon carbide and gas at temperature and background pressure for particular time sufficient to re-arrange carbide.

HANNON J B, TROMP R

Flow field plate for fuel cell applications comprises graphene-containing layer having carbon layer surface with small contact angle and disposed over metal plate.

ABD E M H, DADHEECH G V, MIKHAIL Y M, TRABOLD T A, DOSHIRCI G V, FALTA S R, ELHAMID M H A, ABBOUD E M H, TERRABOD T A