国家/地区 世界知识产权组织（6）
IPC部 B（6）
IPC大类 B32（6）
IPC小类 B32B（6）
IPC B32B009/00（4） C23C016/26（4） B32B038/10（3）
C01B032/186（3） B32B009/04（2） B32B037/00（2）
C01B031/04（2） C01B032/182（2） C01B032/194（2）
H01L029/16（2）
发明人
公开年 2017（5）
申请年 2016（6）
专利权人

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Transfer method of graphene for laminating material and designing shape of object, involves adhering graphene to one side portion of imprint receptive seat, and passing imprint receptive seat and metal sheet through etchant to graphene.

KIM Y K, YONG K K, KIM Y

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F