国家/地区 韩国（6） 美国（5）
IPC部 B（6）
IPC大类 B82（6） C01（5） C08（2）
H01（2）
IPC小类 B82B（6）
IPC B82B001/00（6）
发明人 HONG J（2） HONG J M（2） LEE S（2）
LEE W S（2） LIM J A（2） SONG Y（2）
SONG Y W（2）
公开年 2014（3）
申请年 2009（2） 
专利权人 KOREA INST SCI TECHNOLOGY（6）

Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.

LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M

Making nanoparticles of target material, involves mixing graphene oxide with aqueous solvent to give aqueous solution, mixing target material with organic solvent to give organic solution, and mixing aqueous solution with organic solution.

LIM J A, SONG Y, HONG J, YOO D Y, KIM H, SONG Y W, HONG J M, KIM H S

Polyphase carbon nanostructures comprise graphene sheath made of graphene layer, and diamond nano-flakes inserted into graphene sheath.

LEE W S, LEE H J, BAIK Y J, PARK J K

Preparing graphene used in e.g. LEDs, transistors involves treating graphite with acid to form graphite oxide, mixing with metal oxide nanoparticles; and treating with acid to separate graphene.

CHOI W K, PARK D H, KWON B W, SON D I, CHOI W

Graphene complex nanofiber used for manufacture of e.g. luminescent display, is obtained by dispersing graphene on surface of polymer nanofiber having specific thickness, or carbon nanofiber.

JANG S, PARK H, CHO S, KIM D, HONG W, LEE S, PARK T, CHOI B, PARK H S, JO S M, KIM D Y, HONG W H, LEE S Y, PARK T J, CHOI B G, JANG S Y

Stacked graphene-diamond hybrid material for semiconductor device comprises diamond matrix, and stacked graphene configured to be converted in certain thickness from a lattice plane cut by surface of matrix due to alternative loss of plane.

AHN J, LEE J, LEE S, LEE W, AHN J P, LEE J K, LEE S C, LEE S H, LEE W S, LEE U