国家/地区 美国（5） 世界知识产权组织（3） 德国（2） 韩国（2） 台湾（2）
IPC部 B（5）
IPC大类 B82（5）
IPC小类 B82B（5）
IPC B82B003/00（4） B82Y040/00（4） C01B031/04（4）
B82Y030/00（3） C01B031/02（3） C23C016/26（3）
H01L021/02（3） B32B009/00（2） B82B001/00（2）
B82Y010/00（2） C01B032/182（2） C01B032/186（2）
C30B025/18（2） H01L029/06（2） H01L029/16（2）
发明人
公开年 2013（5）
申请年 2012（4） 
专利权人

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Method for manufacturing laminate of graphene to produce e.g. electronic device product, involves providing target substrate to form first composite comprising target substrate, and removing of first composite from growth substrate.

HAQUE S M, WHITE R, BOWER C, HAQUE S

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Fabricating graphene structures, comprises fabricating a crystalline graphene layer on a surface, and subsequently decreasing crystallographic disorder of crystallographically disordered edges by heating crystalline graphene layer.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, UNG K M

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A