国家/地区 德国（6）
IPC部 B（6）
IPC大类 B82（6）
IPC小类 B82B（6）
IPC C01B031/02（6）
发明人 CHANDRA B（2） TULEVSKI G S（2）
公开年 2013（3） 2010（2）
申请年 2008（2）  2012（2） 
专利权人 CHANDRA B（2） INT BUSINESS.（2） TULEVSKI G S（2）

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Doping cerium(IV) salt with carbon material comprising carbon nanotubes or graphene, useful for producing a manufacturing article, comprises dissolving cerium(IV) salt, which include e.g. cerium(IV) salt of nitric acid with carbon material.

AFZALIARDAKANI A, CHANDRA B, TULEVSKI G S, AFZALIARAKANI A

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Manufacturing carbon nanotube-, fullerene- and/or graphene-containing coating for use as electromechanical component or lead frame, involves applying carbon nano-tubes, fullerene or graphene on tin-containing coating by mechanical treatment.

ADLER U, BURESCH I, PRIGGEMEYER S, RODE D, SCHMIDT H, ROHDE D

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T