国家/地区 中国（17） 美国（13） 世界知识产权组织（12） 韩国（8） 日本（7） 欧洲专利局（EPO）（4） 台湾（4） 波兰（2）
IPC部 C（30） B（12） H（10）
IPC大类 C01（30）
IPC小类 C01B（30）
IPC C30B029/02（20） C01B031/02（19） C01B031/04（17）
B82Y040/00（9） C23C016/26（9） B82Y030/00（8）
C30B025/18（5） H01L021/02（5） C01B032/186（4）
C30B001/02（4） C30B025/02（4） H01L029/16（4）
C30B025/00（3） C30B029/68（3） H01B001/04（3）
发明人 ZHANG Y（7） GUO H（6） ZHANG K（6）
DENG P（3） KELBER J（3） LEI T（3）
TANG X（3） ZHAO Y（3） ATRASZKIEWICZ R（2）
DING G（2） DYBOWSKI K（2） KULA P（2）
MODRZYK W（2） PIETRASIK R（2） XIE X（2）
公开年 2013（13） 2012（12） 2014（5）
申请年 2012（30）
专利权人 UNIV XIDIAN（7） UNIV NORTH T.（3） CHINESE ACAD.（2） KELBER J（2）

Preparing amino modified graphene oxide involves dissolving graphene oxide in solvent, depositing obtained paste on upper surface, fixing electric lead on support material using epoxy resin glue, and drying obtained electrode.

CAO H, LI M, LIU C, ZHANG Y

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Separating graphene film from liquid graphene-forming matrix involves upon completion of heating/adding hydrocarbon mixture, and during cooling, sliding mould frame over surface of liquid forming matrix, and lifting mould frame above matrix.

ATRASZKIEWICZ R, DYBOWSKI K, KLINOWSKI B M, KULA P, MODRZYK W, PIETRASIK R, ZAWISTOWSKI P Z

Method for producing graphene layer, involves fixing liquid metal on solid substrate or ceramic metal, fixing outer layer of liquid metal or alloy metals at melting point, and forming multi-layer in graphene forming die.

KULA P, RZEPKOWSKI A, PIETRASIK R, ATRASZKIEWICZ R, DYBOWSKI K, MODRZYK W

Manufacture of graphene involves coating graphene oxide solution on substrate, drying coated graphene oxide solution on substrate, forming graphene oxide flakes, and growing graphene.

RHO J, PARK W, JUNG M, SEO B, MOON J

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Low-temperature formation of graphene on surface of silica carbide e.g. used in medical field, involves forming silicon dioxide film on surface of silicon carbide, segregating carbon atom, removing oxidized film and heat treating.

ARIMA K, SANO Y

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A