国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/186（7）
发明人 SUN Z（3） CAO M（2） LI M（2）
PENG L（2） WEI D（2）
公开年
申请年
专利权人 UNIV FUDAN（7）

Method for realizing chemical vapor deposition graphene transferring process for e.g. manufacturing electronic device, involves carrying-out electrochemical corrosion to copper-based graphene after corrosion, and acquiring exfoliated graphene after removing copper substrate.

GU F, XU Y, TIAN C

Preparation method of graphene-diamond covalent heterogeneous structure used in carbon nano material field, involves using low-melting point metal as catalyst to cover surface of diamond substrate, and converting surface of diamond into graphene by chemical vapor deposition reaction after heating.

JI Z, SUN Z, SHEN B

Graphene/metal organic framework composite structure prepared by e.g. using chemical vapor deposition method at high temperature, transferring the single-layer graphene on copper foil, and epitaxially growing metal organic framework.

SUN Z, DENG H, WU J

Layer-by-layer growing of asymmetrical oxygen and sulfur channels with planar structure to achieve AB-stacked double-layer graphene by growing single-layer graphene film on copper foil, etching, and diffusing gaseous carbon in solid copper.

SUN Z, LIU B

Synthesis of graphene by carbon oxide-assisted chemical vapor deposition involves polishing and oxidizing substrate, placing substrate into chemical vapor deposition system, predetermining graphene, and recording nucleation density.

LIU Y, CHEN Y

Production of three-dimensional graphene used in adsorption field, involves ultrasonically dispersing graphene oxide in deionized water, obtaining aqueous solution of graphene oxide, immersing metal foam in graphene oxide solution.

CAO M, LI K, LI M, LIU D, PENG L, QI G, WEI D, YANG W, XIA D

Low-temperature synthesis of graphene-doped non-metallic surface involves vacuumizing non-metallic substrate, heating, adding precursor containing carbon and doping elements and reacting.

CAI Z, CAO M, LI M, PENG L, WEI D