国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7） C23（2）
IPC小类 C01B（7）
IPC C01B032/186（5） C01B032/194（2） C23C016/26（2）
发明人 PENG H（7）
公开年 2021（7）
申请年 2019（3）  2020（2）  2021（2） 
专利权人 UNIV PEKING（7）

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Carrier for batch preparation of graphene film comprises supporting plates for placing substrate for growing graphene, heating plates for heating substrate, and electrode assembly connected with heating plates.

ZHU Y, MA Z, GAO X, SHAN J, JIA K, PENG H, LIU Z

Use of volatile small molecule compounds in preparation of suspended two-dimensional material films by clean transfer for transmission electron microscopy carrier network, high-resolution structure analysis of single particles, or high-resolution single-atom imaging.

PENG H, ZHENG L

Transferring graphene film comprises e.g. providing first graphene composite structure, removing base layer of first graphene composite structure to obtain second graphene composite structure, and removing buffer layer.

PENG H, GAO X, ZHENG L, LIN L, LIU Z, HU Z, YAN R, YANG H

Graphene composite metal foil double-side growth device has chemical vapor deposition furnace comprising plasma glow region and heating growth region, and connected with unwinding shaft and winding shaft on both sides.

PENG H, CAO F, YANG H, WANG K, WANG X, LIU Z

Growth method of multilayer graphene used for electrons, photoelectrons and catalysis by forming graphene core on substrate by vapor deposition, and changing growth condition, continuously growing, and forming multilayer graphene.

LIU Z, PENG H, SUN L, ZHONG S, LI Y, WANG Y, YU Y, CHEN B

Carrier used for preparing graphene by plasma enhanced chemical vapor deposition, comprises two oppositely set polar plates and growth substrate, where carrier comprises sleeve, hollow structure, first supporting parts and second supporting parts.

PENG H, WANG K, YANG H, WANG X, CAO F, WU Q, LIU Z