国家/地区 韩国（7） 美国（5） 中国（3） 世界知识产权组织（2）
IPC部 C（7）
IPC大类 C01（7） H01（4） C23（3）
B01（2） G01（2）
IPC小类 C01B（7）
IPC C01B031/04（5） C01B031/02（4） C23C016/26（2）
发明人 KIM T H（7）
公开年 2014（2） 2017（2）
申请年
专利权人 LG ELECTRONI.（2） SNU R DB FO.（2）

Manufacturing graphene oxide thin film comprises preparing graphene oxide suspension by diluting graphene oxide in solvent, preheating graphene oxide suspension, coating graphene oxide suspension and oxygen plasma treating.

KIM T H, KIMCHERHUE

Preparing graphene oxide modified magnetic bead involves sulfonating porous polystyrene-di-vinyl benzene beads to obtain sulfonated beads, which are adsorb and selected from ferrous salts, ferric salts or mixtures, and magnetizing.

JUN B H, KIM D E, BAEK A R, XUAN H P, KIM T H

Triboelectric type graphene-based touch sensor device for electronic equipment, has triboelectric for generating triboelectric potential by contact of friction material whose contact is detected based on current change in channel layer.

KIM S W, KIM T H, KHAN U, RYU H J, CHOI S, KANG M, KIM D H, SEUNG W C, KIM S, HO K T, HAN J R, SEUNG C, KIM D, WAN C S

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Gas barrier film used for flexible substrate, has primary graphene layer formed on macromolecular film, and membranous polymer film.

KIM T H, KIM Y K, KEE S B, KIM S K, IM C G, HO K T, GWON K Y, BEOM G S, GUK K S, GYU I C

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T