国家/地区 台湾（14） 美国（11） 中国（9） 世界知识产权组织（3）
IPC部 C（28） H（9） B（6）
IPC大类 C01（28） H01（9） B01（5）
C25（5） C08（3） C09（3）
B82（2） C23（2）
IPC小类 C01B（28）
IPC C01B031/04（13） C01B032/184（6） C01B032/182（4）
C01B032/198（3） C25B001/00（3） H01M004/36（3）
H01M004/583（3） H01M004/62（3） B01D071/02（2）
B01F011/02（2） B82Y030/00（2） C01B032/19（2）
C08K003/04（2） C23C016/26（2） H01M004/13（2）
发明人 LIN C（28）
公开年 2014（5） 2017（5） 2021（4） 2022（4） 2013（3） 2016（3） 2018（3）
申请年 2012（6）  2015（4）  2020（4）  2017（3）  2021（3）  2013（2）  2016（2） 
专利权人 CHUNG SHAN I.（5） ACAD SINICA（3） LIANG C（2） LIN C（2）
TAIWAN SEMIC.（2） UNIV GUANGDO.（2） UNIV ISHOU（2） UNIV NAT CHE.（2）

Semiconductor device, comprises substrate and fin structure on substrate, and includes epitaxial region, etch stop layer on epitaxial region, interlayer dielectric layer on etch stop layer, and metal contact through etch stop layer and interlayer dielectric layer.

SHEN T, HUANG J, CHEN S, LIN H, LIN C, WOON W, KHADERBAD M A

Graphene-aluminum alloy material useful in aluminum-based composite material e.g. particle reinforcing body and fiber reinforcing body, comprises silicon, iron, copper, magnesium, boron, molybdenum, graphene powder, rare earth, aluminum and impurities.

LIN C, NAN Q

Forming dry electrode for measuring electrophysiological readings, by growing silicon carbide film on silicon substrate, depositing metals on surface of silicon carbide film, heating to react metal with silicon of silicon carbide film to form carbon and silicide and carbon forms graphene layer.

IZZO K A, AMJADI POUR M, FAISAL S N, LIN C, IACOPI F

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C

Preparing graphene-containing mixed film, comprises e.g. using strong oxidant to oxidize layered graphite powder to form layered graphene oxide with carbonyl, carboxyl and epoxy groups, and mixing Dimethylformamide and graphene oxide.

LIN C, LIU T, CHUANG Y, WEI H, HSU N

Preparation of graphene oxide-iron composite film for removing pollutants from wastewater, involves mixing ferrous ion salt with graphene oxide aqueous solution, and pouring obtained mixed solution to air extraction device.

CHEN W, LIN C

Mild discharge preparation of fluorinated graphene comprises e.g. mixing carbon source, polytetrafluoroethylene powder and active metal, placing in the reaction tube, preheating the mixture and performing electrical discharge machining.

CHEN Y, XIAO J, DING S, GAO Z, LIN C, LONG J, CHEN X, GAO J

Preparing graphene-based polyethylene glycol phase change material comprises immersing polyurethane sponge in dispersion of carbon black in deionized water, performing first electrical discharge machining, mixing, acid washing, and drying.

CHEN Y, LUO X, DING S, LIN C, GAO Z, CHEN X, GAO J

Hydroxyapatite/graphene aerogel anode for preparing a microbial fuel cell, comprises graphene oxide and hydroxyapatite, and is prepared by preparing graphene oxide aqueous solution, and preparing hydroxyapatite suspension.

LIN C, ZHANG Y, QIU Z, ZHAO T, ZHENG J

Preparing graphene by direct stripping of ionic liquid comprises mixing graphite and ionic liquid, stirring reaction, adding water, stirring and collecting precipitate, washing precipitate and then drying.

LIANG Y, LI G, LIN C, ZHU H, CHEN G, YANG Z