国家/地区 中国（9）
IPC部 C（9）
IPC大类 C01（9） B82（2）
IPC小类 C01B（9）
IPC C01B032/186（9）
发明人 LIU Q（9）
公开年 2017（2） 2018（2） 2020（2） 2021（2）
申请年 2017（3）  2020（2） 
专利权人 13TH RES INS.（3） SAURER JIANG.（3）

Preparing small-size graphene comprises adding copper chloride, potassium salt mixture and compound additives into water, copper plating, heating, placing in mixed acid solution and in sulfuric acid solution, respectively and filtering.

HE B, ZHANG C, LIU Q, LI P

Preparing large-size clean graphene material used for optoelectronics, by growing graphene layer on surface of metal substrate, forming metal layer on graphene layer, forming photoresist layer, and adhering glue-containing soft film.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Preparation of graphene transparent conductive electrode, involves depositing graphene film on surface of metal foil, adhering to transparent flexible substrate, transferring obtained film to alcohol/water mixed solution, and drying.

LI J, LIU Q

Preparing silicon carbide-based twisted multilayer graphene material involves growing graphene materials on silicon carbide substrates, taking hydrogen as carrier gas and introducing gaseous carbon source to grow.

LIU Q, YU C, HE Z, GAO X, GUO J, ZHOU C, FENG Z

Auxiliary device for preparing graphene, comprises supporting body, buffer layer which is arranged on upper surface of supporting body, where buffering layer is provided with multiple penetrating buffer layer of hole.

GAO X, FENG Z, YU C, LIU Q, HE Z, ZHOU C, GUO J

Modified chemical vapor deposition for preparing uniform graphene material, involves selecting silicon carbide substrate, cleaning, drying, vacuumizing, turning on microwave power, heating and removing gas adsorbed on surface substrate.

LIU Q, WEI C, HE Z, WANG J, GUO J, ZHOU C, FENG Z, YU C

Preparation of low-fold density graphene material involves taking insulating substrate, cleaning, drying, putting into chemical vapor deposition equipment, vacuumizing, turning on the microwave power, heating and reacting.

LIU Q, WEI C, HE Z, WANG J, GUO J, ZHOU C, FENG Z

Preparation of nanocrystalline graphene on sapphire substrate, involves placing sapphire substrate in graphene plasma-enhanced chemical vapor deposition equipment, introducing inert gas, pretreating substrate in hydrogen atmosphere.

WEI C, FENG Z, LIU Q, HE Z, WANG J, SONG X, ZHOU C

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X