国家/地区 中国（8）
IPC部 C（8）
IPC大类 C01（8） B82（2）
IPC小类 C01B（8）
IPC C01B032/186（8）
发明人 ZHAO X（8）
公开年 2017（2） 2018（2）
申请年 2017（2）  2019（2） 
专利权人 UNIV SHANDON.（4） SHENZHEN YIC.（2）

Preparation method of easy-to-exfoliate near-free state graphene useful in the field of semiconductor electronic devices and energy conversion, involves pretreating metal substrates, placing substrate in quartz assembly, placing buffer material between quartz assembly and metal substrate.

ZHAO X, YU F, CHENG X, LI Y, GUO X, ZHANG X, WANG P, SUN L

Preparing vertical graphene material useful for capturing exosome, comprises cleaning and drying substrate by plasma-enhanced chemical vapor deposition, depositing carbon atom on substrate to form vertical graphene layer and forming chemical group on vertical graphene layer by chemical modification.

SHI L, DING X, ZHAO X, ZHONG X

Preparing graphene involves providing substrate, placing substrate in reaction chamber, performing annealing pretreatment on substrate, and introducing carbon source, and performing chemical vapor deposition reaction.

LIU Z, ZHAO X, CHEN Z, GAO X

Upright graphene-polymer polymer composite comprises substrate, upright graphene, and high molecular polymer, where upright graphene grows on surface of substrate, and high molecular polymer is cured into film and loaded on surface.

ZHENG W, ZHAO X

Preparation of graphene dendritic crystal on insulating substrate for preparing microelectronic device, involves cleaning insulating substrate, drying, placing in furnace, vacuumizing, heating, passing hydrogen and etching substrate surface.

XU S, LI Y, ZHANG J, SUN L, YU F, WANG J, ZHAO X

Preparing large - area three - dimensional graphene using composite metal template, comprises e.g. providing metal foam, cleaning, removing impurity, electroplating or depositing other metal on metal foam to obtain composite metal,.

YANG Z, FAN W, ZHAO L, YU F, CHENG X, ZHAO X

Preparation of graphene foam used in e.g. sensor, involves placing foam metal in chemical vapor deposition furnace, introducing carbon source gas into furnace, performing chemical vapor deposition, cooling, etching, water washing and drying.

LI X, ZHANG S, WANG R, DENG Y, ZHAO X

Method for growing graphene on hexagonal silicon carbide silicon surface used in preparation of graphene single crystal, involves polishing hexagonal silicon carbide wafer, etching wafer, depositing metal substrate and growing graphene.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X