国家/地区 美国（4） 世界知识产权组织（4） 韩国（3）
IPC部 B（8） C（8） H（4）
G（2）
IPC大类 B01（8） C01（8） H01（3）
C23（2） G03（2）
IPC小类 B01J（8）
IPC B01J019/08（8）
发明人
公开年 2022（4） 2023（4）
申请年 2022（8）
专利权人

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Production of e.g. hydrogen used in e.g. domestic heating application, involves supplying catalyst composition comprising carbon catalyst to reaction zone, heating, contacting with reaction gas comprising hydrocarbon or its mixture, and performing catalytic non-oxidative decomposition of gas.

FRANCKE L, BENQUET C, DATH J, TRUONG PHUOC L, PHAMHUU C, NHUT J

Device used to conversion of feedstock to resultant material having higher degree of crystallinity than feedstock comprises constraining reservoir, electrodes, compression system, alternating current power source and electrical controller.

MANCEVSKI V, LUONG D X, COOKSEY T, WILLIAMS J, MAZOR E, ZHANG Z, JAY B

Production of solid carbon used in composition of matter, involves receiving carbon dioxide and water in reactor, dissociating carbon dioxide and water to form dissociated species, exposing dissociated species to electric field to facilitate reactions, generating and outputting solid carbon.

STOWELL M W, SIENKO L, STOWELL W M

Continuous mass production of graphene using thermal plasma comprises, generating plasma by injecting, injecting expandable graphite and intercalation graphite, exfoliating graphene by expanding expanded graphite, and drying by hot air.

KYOUNGJEONGBAE, HWAN B J, CHOI S

Processing precursor material into product utilizing non-thermal plasma involves selectively converting plasma forming material to non-thermal plasma by microwave radiation, forming one or more streamers, and exposing hydrocarbon precursor material to streamers and microwave radiation.

ZELLER K W, SKOPTSOV G L, MUSSELMAN E T, STROHM J J

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S