国家/地区 日本（6）
IPC部 B（6）
IPC大类 B01（6）
IPC小类 B01J（6）
IPC B01J023/72（6）
发明人 CHIBA G（2） CHIBA Y（2） KOBIKI T（2）
SAKAGUCHI K（2） TATSUYA Y（2） YAMAJI T（2）
YOSHIHIRO C（2）
公开年 2012（2） 2013（2）
申请年 2012（3）  2011（2） 
专利权人 JX NIPPON MI.（4） NIPPON MININ.（3） NIPPON MININ.（2）

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Manufacturing method of graphene involves growing copper single crystal film on spinel single crystal plane substrate, and growing graphene by chemical vapor deposition method with carbon-containing source gas.

NOZAWA K, YOSHII S

Copper foil used for manufacturing graphene for e.g. separator for fuel cell and transparent electrode, comprises copper plating layer and/or copper sputter layer, and has specified value of surface roughness and plane ratio.

KOBIKI T, SAKAGUCHI K

Copper foil for manufacture of graphene for e.g. transparent electrode, conductive thin film of display element, mercury-free fluorescent lamp and carrier of drug delivery system, includes specified amount of preset plane on surface.

KOBIKI T, SAKAGUCHI K, KOHIKI M

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Copper foil for manufacturing graphene, has specified total number of oxide and sulfide having specified diameter with respect to elemental-analysis measurement of surface using scanning electron microscope.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G