国家/地区 中国（70）
IPC部 C（70）
IPC大类 C01（70） B82（28） H01（11）
B01（9） C08（7） C04（4）
C09（4） C30（4） B02（3）
B22（3） C23（3） B32（2）
G01（2） G02（2） H05（2）
IPC小类 C01B（70）
IPC C01B021/064（70）
发明人 ZHANG Y（6） LI Y（5） LIU Y（5）
WANG J（5） JIANG H（4） LIU S（4）
LIU Z（4） WANG H（4） DUAN X（3）
GAO W（3） GAO X（3） GUO Y（3）
LI Q（3） LIU J（3） SONG J（3）
公开年 2021（22） 2017（8） 2022（8） 2014（5） 2019（5） 2023（5） 2018（4） 2016（3） 2020（3） 2015（2）
申请年 2020（14）  2021（14）  2016（8）  2019（7）  2022（7）  2014（4）  2018（3）  2012（2）  2013（2）  2015（2）  2017（2） 
专利权人 GUANGDONG NA.（3） SHANGHAI INS.（3） UNIV JILIN（3） CHANGZHOU XI.（2）
GUANGDONG NA.（2） SAMSUNG ELEC.（2） SHENZHEN INS.（2） SONG J（2）
SUNG C（2） SWAN CO LTD.（2） UNIV NANKAI（2） UNIV NAT DEF.（2）
UNIV NORTHWE.（2） UNIV PEKING（2）

Device for preparing two-dimensional layered material, has chassis used as supporting platform of whole device, motor provided with small belt pulley, and cathode provided with second conductive slip ring, which is connected with third conductive slip ring through fixed middle shaft.

QIAN Y, WANG F, SHEN B, DU Z, ZHU Y, DENG X, PEI X, LI M, CHEN W, XU C, XU W, CHEN J

Stripping method of two-dimensional material, comprises uniformly mixing two-dimensional material with thermoplastic plastic to obtain mixture, heating and melting the mixture, where stripping system material is obtained by plastic processing technique.

WAN W, LI P, LIU S, LI W, ZHAO Z

Method for transferring thin-layer two-dimensional material of ultra-thin silicon target substrate and array electrode, involves sequentially removing second transfer film and first transfer film to realize transfer of thin-layer two-dimensional material to target substrate.

LAN S, ZHANG Z, PAN B, ZHENG Z, HONG Y, WANG P

Large-area boron nitride graphene vertical heterojunction film for preparing the material with graphene material, comprises substrate and hetero structure layer covering substrate, comprises boron nitride and graphene, where boron nitride film is uniformly grown on graphene thin layer.

GAO W, FENG Y, GUO Y, YIN H

Method for preparing micro-nano materials comprise e.g. introducing sacrificial carrier into slurry containing raw materials and auxiliary agents, shaping and drying to form mixture, synthesizing preform to prepare porous body made of micro-nano materials, and performing dispersion operation.

LI Q

Preparing aerogel with double-oriented network used as heat-conducting composite material comprises mixing filler, polymer agglomerant and water, placing double-orientation molding device in refrigeration medium, adding filler mixture, freezing, freeze-drying, sintering and heat-treating.

XU J, ZENG X, SUN R, YAO Y

Preparation of two-dimensional material such as e.g. graphene, using chemical assisted mechanical stripping, involves mixing layered material with strong acid, mechanically peeling obtained mixture, and adding processing liquid to mix uniformly.

CHENG H, QIU L, DING S, LIU M, FAN W

Preparing carbon-based/elemental metal/boron nitride core-shell structure microwave absorbing material involves weighing carbon-based material, metal source, boron-containing material and nitrogen-containing material, adding them to ball milling jar in turn, adding solvent, sealing and ball-milling.

LIU D, JIANG D, SU Q, ZHONG B

Black phosphorus-two dimensional material complex for electronic device, includes first and second two-dimensional material layers being configured to be coupled to each other by van der Waals force, and black phosphorus sheet in which phosphorus atoms are covalently bonded.

YOON S, LEE C, HWANG H, SHIN H, SEOL M, SUK S H, SHIN H J, HWANGHYUNTAE, LEE C S, YUNE S I, YIN S, LI C, SHEN X

Enhancing thermal conductivity of reduced graphene oxide, comprises preparing large-area reduced graphene oxide by thermal reduction method, preparing high-quality boron nitride by mechanical exfoliation, annealing heterojunction high-quality boron nitride/reduced graphene oxide and tuning.

TIAN J, CHEN S, LIU Z