国家/地区 韩国（26） 美国（17） 中国（2） 世界知识产权组织（2）
IPC部 C（28） B（20） H（12）
IPC大类 C01（28）
IPC小类 C01B（28）
IPC C01B031/02（28）
发明人 KU B C（5） LEE S H（5） SONG Y W（5）
KIM J K（4） LEE J（4） LEE J K（4）
KIM H（3） LEE S（3） LIM J A（3）
PARK O K（3） GON S J（2） HONG J（2）
HONG J M（2） JO H I（2） JOH H I（2）
公开年 2014（9） 2012（8） 2011（4） 2015（4） 2013（2）
申请年 2011（8）  2012（8）  2013（7）  2014（3） 
专利权人 KOREA INST SCI TECHNOLOGY（28）

Doping method of carbon material involves doping carbon material chosen from graphene, graphene oxide, carbon nanotube and carbon fiber into ionic liquid and carrying out thermal decomposition and generating decomposed gas.

KU B C, PARK O K, KIM H J, JOH H I, HWANG J Y, YOU N H, LEE J K

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H

Manufacture of graphene-zinc oxide complex used in manufacture of piezoelectric element, involves dispersing graphene in solvent, seeding by adding zinc oxide precursor, adding e.g. tetramine, and growing zinc oxide on graphene.

KIM S Y, KIM H S, YANG C M, YU J, JUNG Y C, LEE H S

Producing graphene useful for manufacturing pulse laser resonator of pulse laser, comprises providing a substrate to grow graphene by depositing a metal film on a transparent supporting member, and growing by laser irradiating the substrate.

SONG Y W, PARK J H, DEBNATH P

Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.

LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M

Manufacture of high quality graphene for high quality graphene film and electronic material, involves filling carbon rod, graphite powder and metal catalyst, filling buffer gas into reaction chamber, and evaporating in reaction chamber.

KIM M J, OH I S, KU B C

Organic electroluminescent device comprises an anode, a hole injection layer, a light emitting layer, an electron injection layer and a cathode stacked on a substrate, and graphene oxide on hole injection layer or electron injection layer.

SHIN S B, KIM S I, KIM Y H, KIM C K, KIM J Y, KIM Y T

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Preparing carbon material, preferably graphene using thermal evaporation, comprises depositing liquid polymer/polymer solution onto substrate, stabilizing obtained organic nanofilm and carbonizing stabilized organic nanofilm.

KIM T, JOH H, LEE S H, KIM T W, JOH H I

Preparing polyimide-graphene composite material involves modifying graphene by covalently bonding amine-substituted aromatic/aliphatic compound on graphene surface, adding modified graphene to polyimide precursor to polymerize, and heating.

YOU N H, PARK O, KU B, LEE J H, GOH M, PARK O K, KU B C