国家/地区 韩国（18） 美国（17） 世界知识产权组织（15） 中国（11） 日本（6） 欧洲专利局（EPO）（5）
IPC部 C（20）
IPC大类 C01（20） H01（12） B82（11）
B01（8） B32（6） C23（5）
C08（3） B05（2） B29（2）
B41（2） C09（2）
IPC小类 C01B（20）
IPC C01B031/02（20）
发明人 KIM H（20）
公开年 2014（6） 2013（5） 2012（4） 2011（2） 2016（2）
申请年 2012（10）  2014（3）  2010（2）  2015（2） 
专利权人 KIM H（5） KOREA INST S.（3） UNIV SUNGKYU.（3） BAE S（2）
GRAPHENE SQU.（2） HANWHA TECHW.（2） HONG B H（2） KOREA ADV IN.（2）
KOREA ADVANC.（2） KOREA INST E.（2） SAMSUNG TECH.（2） UNIST ACADIN.（2）
UNIV SUNGKYU.（2）

Manufacture of porous graphene filter used in filter apparatus, involves providing filters having pores formed by substituting portion of carbon atom by atom produced from source containing pyridine, within filter mainframe.

KWON G, KIM H

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Composite film, has oxide graphene coating layer whose contact angle is maintained on porous polymer supporter at specific degrees, where width of oxide graphene coating layer is in specific range.

PARK H B, KIM H W, CHO Y, YOO B M, HWANG Y S, HO B P, HWANG Y, KIM H, PARK H, YOO B, ZHAO Y

Conductive material for use in electrode of lithium secondary battery used as power source of electronic products, has single layer coal-based pitch coated graphene sheet separated from graphite through chemical exfoliating process.

SHIN S Y, WOO S W, KIM E K, KIM J Y, KIM H W, LEE S M, KIM E, KIM J, LI X, SHIN S, WOO S, KIM H

Composition, useful in an electrochemical capacitor, comprises a combination of a high surface area nanosized graphite comprising nanosized graphene nanotubes and nanosized graphene nanoplatelets, and carbon.

DO I, KIM H, DO IN H

Manufacturing graphene used as anode material in lithium secondary battery, by forming graphite oxide from graphite, subjecting graphite oxide to hydrochloric acid treatment, and subjecting treated graphite oxide to heat treatment.

KANG K, KIM H, KANG K S, KIM H G

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Making nanoparticles of target material, involves mixing graphene oxide with aqueous solvent to give aqueous solution, mixing target material with organic solvent to give organic solution, and mixing aqueous solution with organic solution.

LIM J A, SONG Y, HONG J, YOO D Y, KIM H, SONG Y W, HONG J M, KIM H S

Hierarchical structure of graphene-carbon nanotubes is obtained by growing graphene into carbon nanotubes having hierarchical structure by adding metal nanoparticles on graphene, and is metal-functionalized by metal precursor.

BAE S, KIM H, OH I, BAE S H, KIM H J, OH I K

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S