国家/地区 美国（12） 世界知识产权组织（12） 韩国（11） 日本（10） 中国（9） 欧洲专利局（EPO）（9） 台湾（7） 印度（4） 俄罗斯（2） 新加坡（2）
IPC部 C（13）
IPC大类 C01（13）
IPC小类 C01B（13）
IPC C01B031/02（13）
发明人 MUELLEN K（4） FENG X（3） MILLEN K（3）
MULLEN K（3） CAI J（2） FASEL R（2）
RUFFIEUX P（2） TSAI J（2）
公开年 2014（6） 2013（4） 2015（3）
申请年 2013（13）
专利权人 BASF CHINA C.（4） BASF SE（4） MAX PLANCK G.（4） BASF SCHWEIZ.（2）

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Manufacture of functionalized graphene used for e.g. barrier material, involves forming mixture using graphite oxide, solvent and functionalized compound containing sulfur and amino group, reacting, and recovering resultant graphene.

LEE J S, DO SEUNG H, JEON S Y, HAN G W, KONG J H, DO S H, LEE J, DO S, JEON S, HAN G, KONG J

Producing in electrochemical cell of one or more of graphene, graphite nanoplatelet structures, and graphane, involves passing current through cell to intercalate ions into graphitic negative electrode.

DRYFE R A W, KINLOCH I A, ABDELKADER A M, JEFF R A W, DRYFE R A V

Phase transfer catalyst used in addition or condensation organic reaction, comprises graphene oxide catalyst having oxygen-containing functional group.

KIM Y, LEE H, SOME S

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

Manufacture of reduced graphene oxide involves reacting solid hydrazine compound or its derivative with carbon dioxide, using obtained hydrazine compound as reducing agent for reducing graphene oxide.

HUR N H, LEE B, LEE K H

New oligophenylene monomer useful in polymeric precursor for preparing graphene nanoribbons that used are in thin film semiconductor of electronic, optical, or optoelectronic device e.g. organic field effect transistor device.

MUELLEN K, FENG X, CAI J, RUFFIEUX P, FASEL R, NARITA A, TSAI J, MULLEN K, MILLEN K

Method for carrying metal on graphene oxide for metal-oxidation graphene complex, involves adding solution of metal salt or metal ion to oxidation graphene dispersion, and adding alcohol, N,N-dimethylformamide and/or tetrahydrofuran.

NISHINA YUTA

Graphene nanoribbon used for e.g. spintronic device, contains repeating unit having modification(s) chosen from heteroatomic substitution, vacancy, stone-wales defect, inverse stone-wales defect, and hybridized carbon network.

FASEL R, RUFFIEUX P, MUELLEN K, CAI J, FENG X, BERGER R, TSAI J, CAI Y, MULLEN K, MILLEN K