国家/地区 美国（8） 世界知识产权组织（8） 中国（7） 欧洲专利局（EPO）（7） 日本（7） 韩国（7） 台湾（6） 印度（3）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C01B031/02（8）
发明人 MUELLEN K（3） FENG X（2） MILLEN K（2）
MULLEN K（2）
公开年 2014（3） 2015（3） 2013（2）
申请年 2013（8）
专利权人 BASF CHINA C.（3） BASF SE（3） MAX PLANCK G.（3）

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Manufacture of functionalized graphene used for e.g. barrier material, involves forming mixture using graphite oxide, solvent and functionalized compound containing sulfur and amino group, reacting, and recovering resultant graphene.

LEE J S, DO SEUNG H, JEON S Y, HAN G W, KONG J H, DO S H, LEE J, DO S, JEON S, HAN G, KONG J

Producing in electrochemical cell of one or more of graphene, graphite nanoplatelet structures, and graphane, involves passing current through cell to intercalate ions into graphitic negative electrode.

DRYFE R A W, KINLOCH I A, ABDELKADER A M, JEFF R A W, DRYFE R A V

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

New oligophenylene monomer useful in polymeric precursor for preparing graphene nanoribbons that used are in thin film semiconductor of electronic, optical, or optoelectronic device e.g. organic field effect transistor device.

MUELLEN K, FENG X, CAI J, RUFFIEUX P, FASEL R, NARITA A, TSAI J, MULLEN K, MILLEN K

New imidazolidine-type compound used for mixed ionic liquid for preparation of graphene dispersion liquid for electronic component e.g. energy storage electrical appliance and lithium-ion secondary battery.

AIDA TAKUZO, PARK CHIYOUNG, RAVI SAISUWAN, MATSUMOTO MICHIO, AIDA T, PARK C, RAVI S, MATSUMOTO M

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A