国家/地区 世界知识产权组织（4） 台湾（2） 美国（2）
IPC部 C（5） H（3）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/182（5）
发明人 NAVEH D Y（2）
公开年 2022（3） 2023（2）
申请年 2022（5）
专利权人 UNIV BARILAN（3） 2D GENERATIO.（2）

Coating metal surface with graphene used in organic LED by depositing first graphene molecular precursor on top of metal surface and transforming deposited first graphene molecular precursor into surface bound graphene interfacial layer.

NAVEH D Y

Method for coating non-metallic surface for semiconductor device, involves obtaining graphene molecular precursor comprising substituted hydrocarbyl compound, depositing precursor on non-metal surface, reacting to form covalent bonds, and transforming deposited precursor into surface.

NAVEH D Y

Repairing layers of laminate stack or printed circuit board, comprises providing layered structure, identifying fault location in outer graphene layer, preparing surface of outer graphene layer, and applying localized heat on fault location.

MENTOVICH E, ATIAS B, NAVEH D, LEVI A, SMOLINSKY E Z B

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H