国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/186（6）
发明人 LIU Z（4） CAO F（2） PENG H（2）
WANG K（2） WANG X（2） WU Q（2）
YANG H（2）
公开年 2021（4） 2020（2）
申请年 2020（6）
专利权人 BEIJING GRAPHENE INST（6）

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Preparation method of graphene-ceramic composite material, involves providing radiating ceramic substrate, introducing carbon source, and performing plasma chemical vapor deposition reaction on radiating ceramic substrate to grow graphene layer.

ZHANG Y, SHAN J, LIU Z

Preparing powdered graphene by passing inert gas into microwave plasma chemical vapor deposition to generate plasma, passing carbon source-nucleation density inhibitor mixed gas into microwave plasma chemical vapor deposition system to perform vapor phase growth and directly collecting graphene.

ZHANG J, SUN Y

Carrier used for preparing graphene by plasma enhanced chemical vapor deposition, comprises two oppositely set polar plates and growth substrate, where carrier comprises sleeve, hollow structure, first supporting parts and second supporting parts.

PENG H, WANG K, YANG H, WANG X, CAO F, WU Q, LIU Z

Preparing large-area multilayer graphene comprises providing substrate in reaction chamber, annealing, introducing carbon source, performing chemical vapor deposition reaction and adding water vapor during chemical vapor deposition reaction.

LIU Z, CHEN B, SUN L, LI Y, DING Q, ZHAO Z, LIANG Y, WANG Y, LIU H

Continuous production system of graphene glass comprises conveying device carry glass substrate to move between backup unit, reaction unit and sampling unit, first valve arranged between backup unit and reaction unit.

GU W, ZHENG K, LIU B, GAO X