国家/地区 日本（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/186（7）
发明人
公开年 2017（2） 2020（2）
申请年 2017（2）  2019（2） 
专利权人

Producing graphene film by immersing graphene film and resin layer in laminate made of graphene film arranged on base material and resin layer arranged on graphene film in non-polar solvent and immersing in solution for removing resin layer.

OKIKAWA Y, YAMADA T, HASEGAWA M

Detecting abnormal growth of graphene by preparing inspected object having graphene film formed by chemical vapor deposition on substrate, using dark-field optical system to receive light from film and detecting abnormal growth of graphene.

IFUKU R, MATSUMOTO T, FUJIO A, SAITO K, RYOTA I, TAKASHI M, AKIRA F, KOUSAKU S

Method for manufacturing graphene for coating cantilever used in scanning probe microscope, involves generating surface wave plasma of source gas by microwave excitation to directly form graphene film on substrate without using catalyst.

BSHWAKARMA L, ADHIKARI S, SBASHI S, UMENO M, MABUCHI Y

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Method for fabricating composite film structure for strain sensor system for measuring mechanical movements in biological sample, involves removing metal substrate from graphene and deposited metallic layer to form composite film structure.

ZARETSKI A, LIPOMI D J, SAVTCHENKO A, MOLOKANOVA E, MERCOLA M

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S