国家/地区 美国（23）
IPC部 B（23）
IPC大类 C01（23） C23（23） B82（15）
H01（13） B32（7） B01（4）
C30（4） C03（2） C07（2）
G02（2） G09（2） H05（2）
IPC小类 C01B（23）
IPC C23C016/26（23）
发明人 GUO S（3） OZKAN C S（3） OZKAN M（3）
WANG W（2） WANG Y（2）
公开年 2013（10） 2014（8） 2015（5）
申请年 2013（23）
专利权人 UNIV CALIFOR.（4） GUO S（2） OZKAN C S（2） OZKAN M（2）
SAMSUNG ELEC.（2） SHENZHEN CHI.（2） WANG W（2） WANG Y（2）

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Graphene synthesizer used for synthesizing graphene, comprises heater unit for applying heat to continuous catalytic metal thin film, susceptor unit arranged between catalytic metal thin film and heater, and source material supply unit.

YOON J, YOON J H

Graphene composite electrode material preparation method, involves providing glass substrate, forming metal thin film on glass substrate, and patterning metal thin film to form circuit image.

WANG Y

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S