国家/地区 中国（5）
IPC部 B（5）
IPC大类 B82（5） C01（5） H01（5）
B05（2）
IPC小类 B82Y（5）
IPC B82Y030/00（5）
发明人
公开年 2012（3） 2013（2）
申请年 2011（5）
专利权人

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacture of graphene nanomesh used for e.g. manufacturing semiconductor device, involves depositing several particles having carbon absorption property on graphene at predetermined temperature or more, heating and removing particles.

SATO S, IWAI T

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method of fabricating graphenic material used as electrical conductor for devices e.g. display, involves growing sheet of graphene on planarized metallic substrate.

JOHNSON A T, LUO Z, JOHNSON A

Post-treating method of graphene used for e.g. biosensor, involves forming metal thin film on graphene, disposing liquid phase carrier on graphene, hardening carrier, and separating carrier and graphene from metal thin film.

WON D, CHO S, YOON J, NA D, WON D K, CHO S M, YOON J H, NA D H, YUAN D