国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7） H01（7） B82（4）
IPC小类 C01B（7）
IPC H01L021/02（7）
发明人
公开年 2014（7）
申请年 2013（6） 
专利权人

Semiconductor structure for semiconductor device comprises graphene material and graphene-lattice matching material over at least a portion of graphene material.

MEADE R E, PANDEY S C

Transferring graphene to intermediate layer used for preparing graphene electric device, involves mixing polydimethylsiloxane glue with raw substrate, where polydimethylsiloxane glue is solidified into polydimethylsiloxane transition layer.

LI T, LIANG C, WANG W, WANG Y

Preparation of patterned graphene used for preparing photoelectronic device, comprises uniformly coating solid carbon source on a substance provided with a catalyst and forming high graphic pattern by high-temperature reaction.

HU H, HU L, LI F, YE Y, ZHANG Y, GUO T, WU C, ZHOU X, LIN M

Transferring graphene films from substrate to another substrate, during manufacturing of e.g. touch display, involve forming material layer on part of surface of first substrate, and attaching second substrate to second surface of layer.

WILLNER B I, WILLNER B

Formation of graphene for electronic device, involves forming graphene layer on catalytic metal layer, forming organic-inorganic hybrid film in uncured state on graphene layer, and curing.

MOON J, JUNG K, KANG E, KANG O, JEONG G, KANG E S

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R