国家/地区 美国（7） 中国（6） 日本（5） 世界知识产权组织（4） 韩国（3） 德国（2） 欧洲专利局（EPO）（2）
IPC部 C（7）
IPC大类 C01（7） H01（7） B82（5）
C08（2）
IPC小类 C01B（7）
IPC H01L051/00（7）
发明人
公开年 2012（7）
申请年 2012（3）  2010（2）  2011（2） 
专利权人

Electrode, useful in electronic device e.g. organic light-emitting device, organic solar cell or organic memory device, comprises graphene-containing layer, and layer having work function gradient formed on graphene-containing layer.

LEE T, HAN T, AHN J, LEE Y, WOO S, LEE T W, HAN T H, AHN J H, YI Y B, LEE Y B, WOO S H, LI R

Making graphene nanoribbon comprises contacting poly(phenylene ethynylene) polymer, annulating compound, and catalyst system comprising metal catalyst and protic acid, and oxidizing the arylannulated polymer product.

DICHTEL W R, ARSLAN H, URIBEROMO F J

Fabricating graphene thin film involves making graphene by reducing graphene oxide using sulfonyl hydrazide-based reducing agent, forming graphene dispersed solution by dispersing graphene into organic solvent, and applying solution to film.

NA S I, KIM D Y, KOO H Y, YUN J M, YEO J S, KIM J K

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Graphene light-emitting device e.g. LED comprises a p-type graphene doped with a p-type dopant, an n-type graphene doped with an n-type dopant, and an active graphene that is disposed between the p-type graphene and the n-type graphene.

HWANG S, KO G, SIM S, CHUNG H, SEONG H, SONE C, LEE J, KO H, CHOI S, KIM S, SUN W W, GUAN Y K, SUN H S, CHUNG H J, HAN K S, CHEOLSOO S, LEE Z H, HUYNH D K, HWANG S W, KO G W, SIM S H, SEONG H K, SONE C S, LEE J H, KO H D, CHOI S H, SHIM S, KO K, JEONG H, GO J, SON C

Increasing conductivity of a graphene film, comprises exposing the graphene sheets to a solution comprising a one-electron oxidant configured to dope the graphene sheets.

BOL A A, AFZALIARDAKANI A, TULEVSKI G S, AFZALIARDAKANI A

Manufacture of semiconductor device e.g. field effect transistor used in mobile telephone base station, involves forming catalyst film on substrate, growing graphene on catalyst layer, forming gap and removing catalyst film.

HAYASHI K, SATO S