国家/地区 美国（30）
IPC部 B（30）
IPC大类 C01（30） B32（22） H01（21）
B82（18） B01（11） B05（10）
C23（9） B44（4） C30（3）
D01（2） H05（2）
IPC小类 C01B（30）
IPC C01B031/02（22） C01B031/04（20） B82Y030/00（17）
B82Y040/00（15） B32B009/00（13） H01B001/04（8）
H01L029/16（8） B32B009/04（5） B01J021/18（4）
B05D003/02（4） B44C001/22（4） C23C016/26（4）
B05D001/18（3） B05D003/10（3） B32B015/04（3）
发明人 CHOI J Y（30）
公开年 2009（8） 2011（8） 2014（6） 2012（5）
申请年 2008（7）  2010（7）  2012（6）  2011（3）  2013（3）  2014（2） 
专利权人 SAMSUNG ELEC.（28） UNIV SUNGKYU.（11） UNIV SUNGKYU.（6） CHOI J（2）
SHIN H（2） UNIV SUNGKYU.（2） YOON S（2）

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Graphene laminate for use in switching device and sensor device, has lower piezoelectric material layer that is positioned under lower graphene layer and is provided with negatively-charged surface and positively-charged surface.

LEE S, LEE Y, CHOI J, CHOI J Y, LEE S Y, LEE Y H

Graphene-nanomaterial composite for producing electrode, and electric device, e.g. supercapacitor, fuel cell, and solar cell, comprises graphene stacked structure including graphene films stacked on one another, and nanomaterial.

RYU C, JUNG N, KWON S, CHOI J, RYU C J, JUNG N Y, KWON S G, CHOI J Y

Graphene structure used in transparent electrode for display device or solar cell, comprises graphene doped with dopant, and hydrophobic organic layer on at least one surface of doped graphene.

YOON S, SHIN H, CHOI J, CHOI W, KIM S, LEE Y, CHOI J Y, CHOI W M, KIM S M, LEE Y H, SHIN H J, YOON S M, YOONSUNMI, HEE L

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Fabricating single-layer graphene on silicon carbide wafer used as channels of field-effect transistor array, comprises disposing graphene layers on carbon buffer layer of wafer, and converting buffer layer to single-layer graphene.

WOO Y, YOON S, SHIN H, LEE D, CHOI J, WOO Y S, YOON S M, SHIN H J, LEE D W, CHOI J Y

Apparatus, useful for preparing graphene-structured material for e.g. filler, comprises supply hopper to supply graphite oxide, supply line of which end is fixed to hopper, and reducing atmosphere gas supply unit connected to supply line.

JI B K, CHOI J Y, SHIN C M

Heterogeneous laminate used e.g. in thermoelectric element of thermoelectric module which is used in thermoelectric apparatus, comprises graphene and thermoelectric inorganic compound (e.g. cobalt-antimony compound) disposed on graphene.

CHOI J, BAIK S, HONG S, KIM W, KIM E, LEE Y, BAIK S H, CHOI J Y, HONG S H, KIM E S, KIM W Y, LEE Y H, BAEK S, LI Y

Preparing graphene-layered structure e.g. epitaxial structure that is useful in e.g. transistor, by implanting nitrogen and oxygen ions on surface of silicon carbide thin film to form ion implantation layer and heat treating the film.

SHIN H, CHOI J, AHN J, SEO J, AHN J R, CHOI J Y, SEO J T, SHIN H J

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M