国家/地区 日本（30） 中国（15） 美国（14） 世界知识产权组织（14） 欧洲专利局（EPO）（8） 韩国（7） 加拿大（4） 台湾（4） 印度（3） 西班牙（2） 英国（2） 墨西哥（2） 新加坡（2）
IPC部 C（34）
IPC大类 C01（34） H01（14） B82（11）
B01（9） C23（6） C08（5）
C09（5） H05（5） B29（3）
C02（3） D01（3） B05（2）
B32（2） B33（2） C07（2）
IPC小类 C01B（34）
IPC C01B032/15（34）
发明人 IMADA T（3） NAITO K（3） SUZUKI A（3）
FURUKAWA K（2） KIM H（2） KUBOTA Y（2）
KWON G（2） LI J（2） TAMAKI E（2）
WANG H（2） YOSHINAGA N（2）
公开年 2016（13） 2017（13） 2015（8）
申请年 2015（34）
专利权人 TOSHIBA KK（4） KOREA INST E.（2） NAT INST ADV.（2） NIPPON TELEG.（2）
TORAY IND IN.（2）

Obtaining graphene dispersion liquid, by adding liquid containing graphite and dispersant and granules into container, accommodating granules, and subjecting to ultrasonic irradiation under static conditions.

YAMANAKA S, DOBASHI R, TAKASE M, KUGA Y

Dispersion liquid for manufacture of membrane comprises graphene, dispersing agent, and dispersion medium containing water as main component.

ARAI T, YOSHIZAWA M, KONDO K

Production of graphene-reinforced polymer matrix composite involves mixing multiple particles of graphitic material and multiple particles of solid polymer carrier material to form mixture in impacting chamber of energy impacting apparatus.

ZHAMU A, JANG B Z

Manufacture of porous graphene component involves introducing carbon source and substitution source in vapor deposition furnace, and simultaneously depositing carbon monoatomic layer on substrate positioned in furnace.

KIM H, KWON G

Manufacture of graphene substrate involves laminating layer comprising catalytic metal, laminating layer on surface side of above layer, heat treating obtained layer, and cooling to form graphene between substrate and layer.

NARUTSUKA S, YAMADA J

Hollow component used for forming negative electrode active material, comprises hollow structure comprising accumulated graphene, and transition metal oxide particles positioned between accumulated graphene and on surface of graphene.

TANG J, QIN L C, SHAO Q G

Optical sensor used for detecting position and movement of target component, comprises field-effect transistor containing graphene channel and light-absorption layer including nitrogen functionalized-nanographene containing semiconductor.

TEZUKA H, MATSUI T

Method for manufacturing graphene film used in electronic device, involves blowing source gas containing carbon-type gas from nozzle on surface of base material, and carrying out forced diffusion of radical.

SAKAKIDA H, KIM J H

Evaluation of electroconductivity of graphene oxide-reduced material used as electronic material, involves reducing graphene oxide arranged on insulating layer formed on electrode on substrate, and forming electrode on reduced oxide.

FURUKAWA K, UENO Y, SEKI S, SAKURAI T, SAEKI A, SAKAMAKI D

Heterojunction graphene nanoribbon for resonant tunneling diode comprises substrate, and first, second, and third graphene nanoribbon elements.

YAMAGUCHI J