国家/地区 韩国（18） 美国（11）
IPC部 C（18）
IPC大类 C01（18）
IPC小类 C01B（18）
IPC C01B031/04（11） C01B031/02（6） C01B032/182（4）
H01G011/32（3） B82B003/00（2） B82Y040/00（2）
C01B032/184（2） H01L021/02（2） H01L029/16（2）
发明人 CHOI C G（5） CHOI J S（5） YU Y J（5）
CHOI H K（4） CHUNG K H（4） KIM J T（4）
KIM J Y（3） GYOO K I（2） KIM T（2）
KYU Y I（2） LEE J I（2） NA K B（2）
SONG K（2） YOUN D H（2） YU Y（2）
公开年 2016（4） 2018（4） 2013（2） 2014（2） 2015（2）
申请年 2014（4）  2017（3）  2012（2）  2013（2）  2016（2）  2018（2） 
专利权人 ELECTRONICS TELECOM RES INST（18）

Manufacturing a graphene film involves preparing a substrate comprising a graphene layer, doping the graphene layer with a nitrogen dopant by irradiating ultraviolet rays to the substrate in a reaction gas atmosphere.

PARK J H

Manufacturing nitrogen-doped graphene involves preparing base grapheme, and irradiating base graphene with ultraviolet rays under nitrogen atmosphere at ambient temperature.

PARK J

Electrochromic mirror mounted in vehicle, has interface unit which is mounted between metal layer and graphene layer, and is comprised of micro/nano-porous polymer material.

KIM J Y, LEE J I, CHEON S H, CHO N S, CHO S, KIM Y H, KIM T, RYU H, AH C S, HWANG C, YEON K J, IK L J, HOON C S, SUNGCHO N, MOK C S, HAE K Y, YOUB K T, SEONG A C, SUN H C

Forming heterojunction structure used e.g. in material engineering, comprises providing graphene pattern on substrate, applying current to heat graphene pattern and forming two-dimensional material layer on graphene pattern.

YU Y, JUN Y Y

Three-dimensional graphene structure preparation involves forming graphene precursor by heating carbohydrate and gas generator, forming graphene structure having cavity by carbonizing graphene precursor, and then forming nanopores.

KIM T, YOU I, KIM B N, KIM I G, JUNG S, PARK S, YOUNG K T, KYU Y I, NA K B, GYOO K I, HOON J S, JUN P S

Manufacturing electrode used for capacitor, comprises forming an oxidized graphene thin film by applying composition containing oxidized graphene on a substrate, and irradiating obtained graphene oxide film with light.

SUK Y Y, KYU Y I, HWAN S J, NA K B, GYOO K I, HONG S

Photo detector for detecting incident light by using arrangement of single-layer graphene and multi-layer graphene, has first electrode formed at end of single-layer grapheme, and second electrode formed at end of multi-layer graphene.

KIM J T, CHOI C G, YU Y J, CHUNG K H, CHOI J S, CHOI H K

Manufacture of graphene involves forming double metal catalyst layer comprising two metal layers by calculating thickness ratio of metal layers, and growing graphene using chemical vapor deposition on double metal catalyst layer.

CHOI J S, CHOI H K, CHOI C G, YU Y J, KIM J T, CHUNG K H, HWANG C Y

Transferring graphene layer, comprises e.g. producing self-assembled monomolecular layer on first substrate, producing adhesive layer and supporting layer on monomolecular layer, and removing first substrate and monomolecular layer.

LIM J T, LEE H, LEE J I, CHU H Y, KWOM B H, MOON J, KIM J Y, YU B G, HAN J H

Gene amplifying and detecting device comprises a gene amplifying chip including a chamber formed in it, a reaction solution filled in the chamber and including a fluorescent material, a light source, a light detector, and graphene heaters.

CHUNG K H, KIM J T, CHOI Y H, CHOI C G, CHOI H K, YU Y J, YOUN D H, CHOI J S