国家/地区 美国（9） 韩国（6） 中国（5） 日本（4） 欧洲专利局（EPO）（2） 台湾（2） 世界知识产权组织（2）
IPC部 B（10）
IPC大类 B82（10） C01（10） H01（8）
B32（3） C23（2）
IPC小类 B82Y（10）
IPC B82Y099/00（10）
发明人 KIM J Y（2）
公开年 2012（10）
申请年 2011（5）  2012（5） 
专利权人 SAMSUNG ELEC.（2） UNIV SUNGKYU.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Graphene comprising a hole, useful e.g. for coating an electrode and an active material which are useful in a power storage device and an electric appliance e.g. a display device, a lighting device and a desktop personal computer.

HIROHASHI T, ADACHI S

Method of producing graphene cells in graphite with various intercalated additives.

KALANDARISHVILI A G

Three-dimensional graphene structure useful as next-generation material for electronic device e.g. display device and transparent electrode for solar cell comprises a layer of graphene having periodically repeated three-dimensional shape.

SHIN H, CHOI J, PARK J, AHN J, AHN J R, CHOI J Y, PARK J H, SHIN H J

Synthesizing graphene comprises refluxing reaction mixture of solvent e.g. water and carbonaceous material promoting polycyclic aromatic hydrocarbon formation, collecting and directing obtained vapors to substrate and recovering graphene.

SHANKMAN R S, HANKMAN R S

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J

Preparing transition metal oxide or graphene composite comprises e.g. mixing transition metal salt, water and solution of graphite oxide dispersed in polyol solvent, and preparing the composite by applying microwaves to the mixed solution.

KIM K B, KIM H K, KIM J Y

Manufacture of via electrode involves forming via hole at substrate, forming catalyst layer at sidewall and bottom of via hole, and forming graphene layer in via hole by exposing the catalyst layer to solution mixed with graphene particles.

KIM D, BAEK K, PARK K, PARK J M, KIM Z S, KIM J Y, JEONG Y S, DO L, KIM D P, BAEK K H, DO LEE M

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Making transmission electron microscope grid comprises e.g. applying carbon nanotube film structure to a graphene layer to obtain a graphene layer-carbon nanotube film composite structure, and placing the composite structure on a grid.

LIN X, FENG C, ZHANG L, JIANG K, IM H Y, ZHANG L N