国家/地区 美国（19）
IPC部 C（19）
IPC大类 C01（19） H01（9） B82（6）
C08（3） B01（2） B32（2）
C23（2）
IPC小类 C01B（19）
IPC C01B031/00（19）
发明人 KIM H（2） LI D（2）
公开年 2014（19）
申请年 2013（10）  2014（8） 
专利权人 INT BUSINESS.（2） KOREA INST S.（2） SEKISUI CHEM.（2） SEKISUI CHEM.（2）
UNIV MONASH（2）

Manufacturing reduced graphene oxide, comprises obtaining reduced graphene oxide laminate by reducing prepared dispersion liquid, dispersing reduced graphene oxide laminate in an aqueous solvent to obtain multilayered reduced graphene oxide.

LEE H

Solid-state device structure for separating and isolating graphene monolayer, has single crystalline monolayer of graphene that is arranged on substrate by single transfer process and has surface area of greater than specific inches.

DIMITRAKOPOULOS C D, FOGEL K E, KIM J, PARK H

Manufacture of flaky graphite used for forming flaky graphite-resin composite, involves immersing carbon material having graphene laminated structure in liquid, irradiating electromagnetic waves, heating and slicing carbon material.

INUI N

Composition, useful in an electrochemical capacitor, comprises a combination of a high surface area nanosized graphite comprising nanosized graphene nanotubes and nanosized graphene nanoplatelets, and carbon.

DO I, KIM H, DO IN H

Hybrid nanomaterial useful in antimicrobial composition that is used e.g. to treat or prevent bacterial or fungal infection, comprises graphene oxide nanomaterial covalently conjugated to cationic quaternized chitosan.

CHAN B E M, LI P, CHEN M

Preparation of graphene-based film used for device, involves forming layered structure by providing graphene-based film comprising sheets of graphene, graphene oxide and partially reduced graphene oxide.

LI D, YANG X

Producing random structure graphite intercalation compounds (GIC) by preparing alkali metal-GIC having alkali metal intercalated between graphene layers, and making polar protic solvent to contact with alkali-metal GIC.

WADA T, NAKASUGA A, TOYODA M, TAKUYA W

Producing unitary graphene material used for heat dissipation applications, comprises e.g. dispensing and depositing graphene oxide gel onto surface of supporting substrate, including shear-induced thinning of graphene oxide gel.

ZHAMU A, WANG M, FU L, JANG B Z

Forming a graphene film on a silicon carbide material involves heating the silicon carbide material to a growth temperature, and exposing the silicon carbide material to a growth atmosphere comprising a halogen species.

SUDARSHAN T S, CHANDRASHEKHAR M S, RANA T

Forming graphene film, used in optoelectronics, comprises depositing non-gaseous carbon source onto catalyst surface, exposing non-gaseous carbon source to a gas and initiating the conversion of non-gaseous carbon source to graphene film.

TOUR J, SUN Z, YAN Z, RUAN G, PENG Z