国家/地区 美国（17）
IPC部 C（17）
IPC大类 C01（17） H01（8） B32（5）
B82（5） B01（4） B29（2）
C07（2） C08（2） C09（2）
IPC小类 C01B（17）
IPC C01B031/00（17）
发明人 JANG B Z（2） ZHAMU A（2）
公开年 2015（17）
申请年 2014（9）  2015（7） 
专利权人 JANG B Z（2） NANOTEK INST.（2） UNIV SUNGKYU.（2） ZHAMU A（2）

Producing graphene nanoplatelets involves exposing graphite to a medium to form a dispersion of graphite in the medium, where the medium comprises acid, dehydrating agent and oxidizing agent.

CERIOTTI G, DIMIEV A, TOUR J M

Converting carbon dioxide into graphene useful in energy storage and electronics, comprises contacting metal with gaseous carbon dioxide, and irradiating surface of metal with laser beam to convert carbon dioxide into graphene.

ZHAO C, DONG J, HUANG Y, QIAN X

Functionalized graphene used to identify defects present in the graphene plane, comprises at least one functional group covalently bonded directly to edge of graphene plane, where the functional group is e.g. nitro, amine, halide.

BLANFORD C, HARTMANN M, FLITSCH S, WEHNER M

System for generating graphene in magnetic field comprises plasma generator for producing ionized carbon atoms, plasma generation chamber for receiving carbon atom cloud, and graphene seed source for providing graphene seed to location.

FULLERTON L W, ROBERTS M D

Polymer composition for forming active layer of e.g. solar cell comprises homogeneous dispersion containing graphene oxide or reduced graphene oxide and a polymer immiscible in poly(3-hexylthiophene-2,5-diyl).

RAFAILOVICH M, ISSEROFF R, HONGFEI L, CHEN A, HONFEI L, LI H

Producing graphitic film used in electronic device, comprises mixing graphene platelets with carbon precursor polymer and liquid, removing liquid from wet film, carbonizing precursor polymer composite film and thermally treating the film.

ZHAMU A, JANG B Z

Solid state device structure for graphene device for use in microelectronics application, has single crystalline graphene monolayer placed on substrate including surface area of greater than specific range.

DIMITRAKOPOULOS C D, FOGEL K E, KIM J, PARK H

Method for producing bulk highly oriented graphene structure that is utilized in thermal management device e.g. heat dissipation plate, involves preparing graphene oxide dispersion, and dispensing and depositing graphene oxide dispersion.

ZHAMU A, JANG B Z, WANG Y, FU L

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Manufacture of doped reduced graphene oxide involves dispersing graphene oxide in organic solvent, adding boron trifluoride etherate, alkyl thiol, aryl thiol, alkyl amine or arylamine to dispersed graphene oxide, and processing.

LEE H