国家/地区 中国（32） 美国（22） 世界知识产权组织（17） 欧洲专利局（EPO）（10） 日本（9） 韩国（9） 英国（3） 台湾（2）
IPC部 C（45）
IPC大类 C01（45） B82（15） H01（14）
C23（13） B32（6） C30（4）
C09（3） C12（3） G06（3）
A61（2） B01（2） B05（2）
B22（2） C25（2） G01（2）
IPC小类 C01B（45）
IPC C01B032/186（45）
发明人 ZHANG M（5） DAI J（4） DI Z（4）
LI C（4） WANG G（4） XUE Z（4）
ZHENG X（4） HUANG F（3） LI J（3）
LU J（3） ZHANG X（3） BI H（2）
CHO K（2） GE C（2） GUO X（2）
公开年 2016（20） 2015（19） 2017（6）
申请年 2015（45）
专利权人 SHANGHAI INS.（6） SHANGHAI INS.（3） UNIV CALIFOR.（2） UNIV SOUTHEA.（2）
UNIV YULIN N.（2） YULIN TEACHE.（2）

Preparation of continuous single layer graphene on insulating substrate by providing insulating substrate, depositing germanium film on insulating substrate, using germanium film as catalyst and growing graphene at high temperature.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparation of patterned graphene involves providing insulating substrate, depositing germanium film on insulating substrate, etching desired pattern in germanium film, forming patterned germanium film, and continuously evaporating.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparation method of three-dimensional ordered macroporous-mesoporous graphene for preparing super capacitor, involves immersing organic polymer template spheres into ceramic precursor solution, separating, drying, and heat-treating.

XU F, HUANG F

Microporous-mesoporous-macroporous multistage structure of three-dimensional graphene material used for producing supercapacitor devices, has specific surface area and electrical conductivity, and is macroscopically bulk material.

HUANG F, BI H

Method for manufacturing graphene flower which includes introducing a carbon hydrogen gas.

HUANG K, CHANG C, KOU C

Graphene/carbon nanotube/graphene composite material used for e.g. forming composite electrode, comprises carbon nanotubes having inner diameter of preset range, and graphene deposited on inner and outer surfaces of carbon nanotubes.

HUANG F, BI H, HUANG H, XU F

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Low temperature plasma-based process for preparing substrate coated with graphene-containing thin film, involves plasma-depositing film onto substrate via vapor deposition process, and subjecting layered substrate to laser treatment.

CAFFIO M, MARQUORDT C, ARVIDSEN J H, HAUPT R A B

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M