国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6） C23（6） B82（2）
H01（2）
IPC小类 C01B（6）
IPC C23C014/48（6）
发明人 VEERASAMY V（2） VEERASAMY V S（2）
公开年
申请年
专利权人 GUARDIAN GLA.（2） GUARDIAN IND.（2） SHANGHAI INS.（2）

Graphene processing device for providing low energy injection ion for use in e.g. biological medicine application, has upper electrode net and the lower electrode net through which plasma generated by plasma coil discharge passes so as to process sample located on sample seat in processing chamber.

WANG W, JIANG C, WANG Y, WANG H

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Nitrogen-ion-implanted three-dimensional self-assembled graphene useful as tissue support biomaterial, has graphene sheet structure with preset diameter and magnitude, and comprises preset amount of nitrogen.

CAO Y, HOU X, LI D, ZHAO M, LI X, LIU X

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z

Making strip shaped graphene layer used in semiconductor devices e.g. sensor, involves providing carbon nanotube structure comprising film on substrate surface, implanting carbon ions into substrate, and annealing substrate to obtain layer.

LIN X, JIANG K, FAN S

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V