国家/地区 中国（25）
IPC部 C（25）
IPC大类 C01（25） C23（25） B82（10）
H01（8） B32（5） C30（4）
B01（3） C03（2） C07（2）
G02（2） H05（2）
IPC小类 C01B（25）
IPC C23C016/26（25）
发明人 GUO S（3） JIN H（3） LIU Z（3）
OZKAN C S（3） OZKAN M（3） PENG P（3）
ZHOU Z（3） WANG W（2） WANG Y（2）
公开年 2013（15） 2014（6） 2015（4）
申请年 2013（25）
专利权人 CHANGZHOU ER.（3） UNIV CALIFOR.（3） CHANGZHOU 2D.（2） GUO S（2）
OZKAN C S（2） OZKAN M（2） SHENZHEN CHI.（2） WANG W（2）
WANG Y（2）

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Graphene synthesizer used for synthesizing graphene, comprises heater unit for applying heat to continuous catalytic metal thin film, susceptor unit arranged between catalytic metal thin film and heater, and source material supply unit.

YOON J, YOON J H

Graphene composite electrode material preparation method, involves providing glass substrate, forming metal thin film on glass substrate, and patterning metal thin film to form circuit image.

WANG Y

Forming thin graphene film involves heating graphene growth substrate in high temperature area, applying accelerating and screening electric fields in anode, then heating, introducing carbonaceous gas and screening negatively charged ions.

YAN S, ZONG Z, MA Y, NIU S, TATACHENKO V

Graphene growth device comprises graphene deposition system, deposition furnace and trolley.

JIN H, LIU Z, PENG P, ZHOU Z

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J