国家/地区 中国（6） 日本（3） 美国（3） 世界知识产权组织（2）
IPC部 C（7）
IPC大类 C01（7） C23（7） B82（3）
C30（3） B01（2）
IPC小类 C01B（7）
IPC C23C016/26（7）
发明人 WANG H（7）
公开年 2015（2）
申请年 2015（2） 
专利权人 SHANGHAI INS.（4）

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Chemical vapor deposition device useful for batch preparation of graphene, comprises a furnace body, a furnace cover, an air inlet pipe, an air outlet pipe and a controller and the furnace cover arranged above the furnace body.

WANG H

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L

Growing nanostructured single layer graphene film involves selecting copper foil and then annealing selected material with graphene under mixed atmosphere of argon and hydrogen high temperature.

DONG J, HE H, LI K, WANG H, ZENG X

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X