国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C23C016/26（5）
发明人
公开年 2017（2）
申请年
专利权人

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Preparing graphene film comprises forming a passivation layer on metal substrate, forming hole in passivation layer, forming a graphene film on a hole exposing the metal substrate and covering passivation layer by graphene film.

TIAN X, HE Y, ZHAO G, LI L, MENG Y, GUO T

Rolling device for preparing graphene film to roll comprises e.g. double-layer quartz pipe, unreeling vacuum chamber, reeling vacuum chamber, plasma generator, tubular furnace and double-layer quartz pipe.

ZHANG J, LUO J, XIONG L, GUO W

Method of growing graphene for use in e.g. biomedical applications, involves introducing reaction gas containing oxygen-containing carbon source into furnace, heating, UV-irradiating reaction gas and depositing graphene film on substrate.

CHIU J, YEH C, CHIU P, QIU B, QIU R, YE Z

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A