国家/地区 韩国（32） 美国（27） 世界知识产权组织（19） 中国（18） 日本（13） 欧洲专利局（EPO）（7） 台湾（6） 法国（4）
IPC部 C（54）
IPC大类 C01（54）
IPC小类 C01B（54）
IPC C23C016/26（54）
发明人 HONG B H（6） FAN F Y（5） FAN S（5）
JIANG K（5） LIN X（5） XIAO L（5）
AHN J（4） AHN J H（4） CHOI I S（4）
LEE K J（4） LIN X Y（4） HONG B（3）
JUNG M H（3） LEE K（3） BACSA R（2）
公开年 2012（28） 2013（18） 2011（8）
申请年 2011（54）
专利权人 HON HAI PREC.（5） HONGFUJIN PR.（5） KOREA ADV IN.（5） UNIV SUNGKYU.（5）
UNIV SUNGKYU.（5） UNIV TSINGHU.（5） CENT NAT REC.（4） SAMSUNG TECH.（4）
HANWHA TECHW.（3） KOREA ADVANC.（3） SAMSUNG ELEC.（3） CNRS CENT NA.（2）
GRAPHENE SQU.（2） HAIYANGWANG .（2） INST NAT POL.（2） POSTECH ACAD.（2）
UNIV YONSEI .（2）

Coproducing carbon nanotube and graphene used in polymer matrix, by decomposition at high temperature of carbon source in gas state, comprises contacting carbon source with catalyst comprising mixture of active catalyst-A and catalyst-B.

BEAUSOLEIL J, SERP P, BACSA R, CAUSSAT B

Producing graphene comprises contacting solid catalyst in divided state comprising mixed oxide with gaseous composition flow comprising carbon source, where solid catalyst has single crystal structure and average crystalline domain size.

BACSA R, SERP P

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Preparation of doped graphene involves cleaning metal material and drying, subjecting dried substrate in reaction chamber, introducing protective gas, heating, and introducing gaseous carbon-containing and nitrogen-containing materials.

WANG Y, YUAN X, ZHOU M

Formation method of thin film for graphene film of hexagonal boron nitride involves polishing the surface of substrate consists of metal or metallic compound, and forming thin film from monoatomic layer or diatomic layers.

ODAWARA G, OSHIMA C, HIBINO H

Apparatus for synthesizing graphene film on copper foil, has quasi enclosed substrate holder including open side, and cap placed over open side, where substrate is located inside holder for graphene film synthesis.

BOI A A, LI X, BOL A A

Manufacturing graphene co-extruded film, comprises forming hexagonal boron nitride layer in upper side of substrate, forming metal catalytic layer, forming top graphene layer, and removing metal catalytic layer and top graphene layer.

KIM H K, YANG W S, GEUN K H, SEOK Y U

Apparatus for growing carbon nanostructure i.e. graphene, on fiber for current carbon nanotube synthesis technique, has substrate inlet sized before growth zones to allow spoolable length substrate to pass through growth zones.

MALECKI H C, DAHNE J L, LOEBACH J P, GAIGLER R L, LEDFORD J T, MALECKI H, DAHNE J, LOEBACH J, GAIGLER R, LEDFORD J