国家/地区 中国（4） 世界知识产权组织（3） 日本（2） 美国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C23C016/01（5）
发明人
公开年 2017（3） 2018（2）
申请年 2017（5）
专利权人

Method for manufacturing graphene, involves forming graphene layer on graphene growth substrate, and forming pattern for formation of graphene on graphene growth substrate.

KIM H K, KIM H

Preparing copper/graphene composite material involves using acetone, ethanol and de-ionized water for washing rolled copper foil, ultrasonic cleaning rolled copper foil with hydrochloric acid, and then cleaning copper foil.

ZHANG K, SONG R, LIU P, LI W, CHEN X, MA F, HE D, LIU X

Manufacture of nitrogen-doped graphene film used as conductive film, involves forming nitrogen-doped graphene film on base by irradiating base with plasma containing hydrocarbon, nitrogen, and oxygen having preset partial pressure.

OKIGAWA YUKI, YAMADA TAKATOSHI, ISHIHARA MASATOU, HASEGAWA MASATAKA

Continuous method for preparing film comprising graphene, involves advancing metal substrate having graphene-comprising layer out of processing chamber, and separating graphene-comprising layer to form film comprising graphene.

HARUTYUNYAN A, HARUTYUJAN A

Chemical vapor deposition process for forming foam-like structure, involves causing decomposition of organometallic compound vapor into metal particles, and precursor gasses into graphene domains and/or hexagonal-boron nitride domains.

LOEBLEIN M, TSANG S H, TEO H T E, TSANG S, ZHANG H