国家/地区 欧洲专利局（EPO）（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/182（5）
发明人
公开年 2016（2）
申请年 2016（2） 
专利权人

Continuously or semi-continuously producing graphene by introducing particles comprising core into stationary deposition chamber and subjecting to plasma enhanced chemical vapor deposition using carbon-containing gas to form solid graphene.

BEUKES J A, HUANG F

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Obtaining material deposited on substrate by plasma-assisted chemical vapor deposition used as component of window or touch panel and as component in protection system, involves forming one or more graphene layers.

MUNOZ GOMEZ R, GARCIA HERNANDEZ M D M, GOMEZALEIXANDRE FERNANDEZ C, GOMEZ R, HERNANDEZ M D M, FERNANDEZ C, MUNOZ G R, GARCIA H M D, GOMEZALEIXANDRE F C

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S