国家/地区 美国（5） 中国（4） 世界知识产权组织（4） 欧洲专利局（EPO）（3） 日本（2） 韩国（2） 新加坡（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C23C016/56（6）
发明人
公开年 2013（3） 2014（2）
申请年 2013（6）
专利权人

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Silicon carbide substrate graphene production device includes quartz heating cavity, heating cavity inner bucket, heating chamber, opening cavity, top cover, temperature measuring window, air inlet, air outlet and cooling water exit.

GAO Y, SONG J, WANG J, ZHANG H

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Growing multilayer graphene film used to form flexible transparent electrode, comprises disposing carbonizing catalyst in reaction chamber, flowing gaseous carbon source/weak oxidizing vapor over catalyst surface, and cooling.

LOH K P, ZHANG K, CASTRO A H, LOH K

Applying graphene coating to a substrate containing iron or aluminum, comprises providing metallic layer on a surface of substrate, and contacting metallic layer with a source of carbon atoms to provide a graphene coating on metallic layer.

KINLOCH I, LEWIS A, KING M, LEVIS A

Method for forming graphene film used for e.g. flexible electronics application, involves heating copper-containing substrate, exposing substrate to carbon-containing precursor gas to dissolve carbon atoms into substrate, and cooling.

DONG G, VAN RIJN R