国家/地区 中国（46） 美国（21） 世界知识产权组织（21） 韩国（13） 日本（10） 台湾（9） 欧洲专利局（EPO）（6） 英国（4） 德国（3） 印度（2） 俄罗斯（2）
IPC部 C（94）
IPC大类 C01（94）
IPC小类 C01B（94）
IPC C23C016/26（50） C01B032/186（41） C01B032/194（27）
C01B032/184（21） C23C016/02（14） C23C016/56（13）
B82Y030/00（11） B82Y040/00（10） C23C016/44（10）
C22C001/10（6） C23C014/06（6） C23C016/54（6）
H01L021/02（6） H01L021/205（6） H01L021/285（6）
发明人 DUAN Y（5） LI X（5） LI Z（5）
MATSUMOTO T（5） SHAO L（5） SHI H（5）
ZHANG Y（5） CHEN Y（4） DIXON S（4）
GUINEY I（4） HUANG D（4） IFUKU R（4）
LI Y（4） WADA M（4） CHEN Q（3）
公开年 2022（94）
申请年 2022（45）  2021（44）  2020（5） 
专利权人 TOKYO ELECTR.（6） CHINESE ACAD.（5） CHONGQING GR.（5） PARAGRAF LTD（4）
CHANGZHOU SI.（3） APPLIED MATE.（2） CRRC IND RES.（2） DAEJOO ELECT.（2）
JIANGSU JIAN.（2） SAMSUNG ELEC.（2） UNIV BARILAN（2）

Carbon steel material useful for heat sink in electrical and electronic devices comprise carbon steel substrate, and reduced graphene oxide coating layer formed on the carbon steel substrate.

DOW H S

Method for improving multi-layer graphene coverage rate on copper-based alloy substrate comprises annealing copper base alloy substrate, introducing carbon source to graphene growth after annealing, realizing multi-layer graphene, quickly cooling to room temperature, ending growth.

CHEN Z, XIAO R, YU G, ZHANG Y

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Repairing layers of laminate stack or printed circuit board, comprises providing layered structure, identifying fault location in outer graphene layer, preparing surface of outer graphene layer, and applying localized heat on fault location.

MENTOVICH E, ATIAS B, NAVEH D, LEVI A, SMOLINSKY E Z B

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Iron-based substrate for producing graphene, is derived from factory waste carbon iron sheet having specified thickness, surface roughness and carbon content.

ZANG X, CAO N, QI H, SHAO Q

Preparing nanoparticles on a substrate for composite, involves depositing micro-sized particles or salt precursors on a substrate, and applying a rapid, high temperature thermal shock to the substrate and the micro-sized particles or the salt precursors.

YAO Y, CHEN Y, HU L

Preparing vertical graphene-metal nanoparticles hybrid materials used for biotechnological applications comprises synthesis of gold nanoparticles, ex-situ anchoring of gold nanoparticles on vertical graphene sheets and removing by-products.

TUCUREANU V, MATEI A