国家/地区 美国（13） 世界知识产权组织（10） 中国（8） 韩国（8） 日本（7） 欧洲专利局（EPO）（6） 印度（4） 墨西哥（3） 加拿大（2） 新加坡（2）
IPC部 C（15）
IPC大类 C01（15）
IPC小类 C01B（15）
IPC B82Y030/00（12） C01B031/02（11） C01B031/04（11）
B82Y040/00（9） C01B031/00（6） B82B001/00（5）
C08K003/04（4） B82B003/00（3） H01B001/04（3）
B01J021/18（2） B01J037/02（2） B32B009/00（2）
C01B032/182（2） C01B032/194（2） C07C000/00（2）
发明人 LEE S H（2） TOUR J（2） TOUR J M（2）
公开年 2011（15）
申请年 2011（9）  2010（6） 
专利权人 UNIV MANCHES.（2） UNIV RICE WI.（2）

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

New functionalized graphene compound comprising graphene and fluorine having specific fluorine to carbon ratio used as structural material, electronic component, optical component, magnetic component or coating.

GEIM A, RAVEENDRANNAIR R, NOVOSELOV K, RAEBINDEURAN N R, RAVEENDRAN N R

Manufacture of reduced graphene oxide for manufacturing reduced graphene-polymer composite, involves treating graphite with strong acid, mixing with halogen-substituted aromatic compound and stirring.

KU B C, PARK O K, LEE S H, NA S I, JO H I, KIM J K, LEE J H, KU B, PARK O

Non-transition metal catalyst, useful in oxidation, hydration, dehydrogenation, condensation, polymerization or auto-tandem oxidation-hydration-condensation reactions, comprises catalytically-active graphene oxide or graphite oxide.

BIELAWSKI C W, DREYER D R, JIA H, BIELAWSKI C, DREYER D

Composition, useful in e.g. high speed transistors, electronic devices, sensors, solar cells, optoelectronic devices, logic devices, ultra capacitors, and actuators, comprises unaffixed graphene particulates.

BERRY V, MOHANTY N, MOORE D S

Graphene precursor compound for manufacturing nanographene structure, is obtained by heat-melting metallocene compound and compound having dibenzothiophene structure, and performing ligand exchange.

INOUE C, ENDO M, TAKEUCHI K

Doped, at least partially saturated graphene, useful in electronic devices including transistors, and as conductors including microcircuits or bulk conductors.

GIUSTINO F, FERRARI A C, SAVINI G

Method for manufacturing graphene that is utilized in e.g. semiconductor, involves mixing organic compound and graphite with reaction medium containing poly phosphate and phosphorus pentoxide.

CHOI E K, JEON I Y, BAE S Y, BAEK J B

Producing graphene, useful for catalyzing chemical cross-coupling of at least two reactants of interest, comprises irradiating solid graphite oxide or a solution of graphite oxide with microwave radiation.

ELSHALL M S, ABDELSAYED V, HASSAN H M A, KHDER A E R S, ABOUZELD K M, DAI Q, AFSHANI P, GUPTON F, SIAMAKI A R, ALOTHMAN Z A M, ALKHATHLAN H Z, ABOUZEID K M

Transparent electrode for optoelectronic applications e.g. organic photovoltaics and organic light emitting devices, comprises a grid structure, a graphene film associated with the grid structure, and a substrate.

TOUR J M, ZHU Y, TOUR J, SUN Z, YAN Z, RUAN G, PENG Z