国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/186（3） C01B032/184（2） C01B032/194（2）
发明人 ZHOU C（6）
公开年 2020（3） 2021（3）
申请年 2020（6）
专利权人 13TH RES INS.（2）

Hydrogen barrier coating for inner surface of hydrogen storage and transportation device, comprises deposited catalytic metal layer rich in catalytic metal ions formed on surface of substrate.

XIAO S, WU H, ZHOU C, CHEN G, SHI K

Preparing large-size two-dimensional material heterostructures comprises depositing atomic layer and growth on an aluminum oxide film, using second metal substrate, spin-coating photoresist, stripping, and drying.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Preparing large-size clean graphene material used for optoelectronics, by growing graphene layer on surface of metal substrate, forming metal layer on graphene layer, forming photoresist layer, and adhering glue-containing soft film.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Preparation of graphene reinforced aluminum matrix composite material with dual-mode structure involves preparing three-dimensional graphene framework, mixing with aluminum metal powder, cold pressing, and heating.

SHAO P, MEI Y, LIU J, YIN Q, ZHANG Q, YANG W, WU G, JIANG L, CHEN G, KANG P, XIU Z, QIAO J, ZHOU C, GOU H

Preparing negative electrode material for lithium ion battery by preparing nickel salt solution, adding bio-template absorbent cotton, soaking, performing blast drying, adding graphene oxide solution, heating, crystallizing, and air-drying.

GUO X, DONG X, ZHOU J, LI M, ZHOU C, SHI L, SUN W

Preparing silicon carbide-based twisted multilayer graphene material involves growing graphene materials on silicon carbide substrates, taking hydrogen as carrier gas and introducing gaseous carbon source to grow.

LIU Q, YU C, HE Z, GAO X, GUO J, ZHOU C, FENG Z