国家/地区 韩国（8）
IPC部 C（8）
IPC大类 C01（8） H01（8） B01（2）
B82（2） C23（2）
IPC小类 C01B（8）
IPC C01B031/04（4） C01B032/182（3） C01B032/186（3）
B82Y030/00（2） B82Y040/00（2） C23C016/26（2）
C23C016/50（2） H01L021/02（2） H01L029/06（2）
H01L029/16（2） H01L031/0352（2） H01L031/18（2）
H01M004/587（2） H01M010/0525（2）
发明人 JIN C（8）
公开年 2015（2） 2020（2）
申请年 2014（2） 
专利权人 KOREA INST E.（3） SAMSUNG ELEC.（3） UNIV KYUNGHE.（2） UNIV KYUNGHE.（2）

Preparing reduced acylated graphene oxide used in electrode active material of lithium secondary battery, involves subjecting graphene oxide to acylation reaction to prepare acylated graphene oxide, and reducing the acylated graphene oxide.

KIM D H, PARK S, YEON S, SHIN K, JIN C, HWANG S H, SEUNGHAE H, JIN C S, HEE S K

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Interconnect structure for use in electronic device, has cap layer provided on surface of conductive wiring and which includes nanocrystalline graphene comprising nano-sized crystals.

BYUN K, SHIN K, KIM Y, SHIN H, SONG H, LEE C, KIM C, CHO Y, BIAN Q, SHEN J, JIN Y, SHEN X, SONG X, LI C, JIN C, ZHAO L, BYUN K E, SHIN K W, HUN K Y, SHIN H J, SONG H J, LEE C S, CHO Y C

Making graphene composite used to make active material for supercapacitor, involves radiating microwave on graphite oxide-conducting agent mixture, dispersing formed material in liquid and ultrasonic-wave pulverizing, and freeze-drying.

YEON S, JEON M, SHIN K, JIN C, LEE B, PARK S, KIM D, LEE S H, YEON S H, JIN C S, JEON M S, LEE B S, SHIN K H, PARK S K, KIM D H

Tunneling diode used for diode-based optoelectronic device, consists of silicon quantum dot layer formed on silicon oxide thin film, doped layer having structure having graphene-silicon quantum dot hybrid structure, and electrode.

CHOI S H, SHIN D H, KIM S, SUK H C, DONG H S, SUNG K, CHIO S, SHIN D, JIN C

Photodiode useful in optoelectronic device, comprises e.g. a silicon quantum dot layer containing silicon quantum dots formed on silicon oxide thin film and a graphene-silicon quantum dot hybrid structure formed on silicon quantum dot layer.

SUK H C, DONG H S, SUNG K, CHOI S H, SHIN D H, KIM S, CHIO S, SHIN D, JIN C, DONGHEE S, SHIGAO C, SUNGKIM

Producing graphene, useful e.g. in secondary cell electrode comprises e.g. performing thermochemical reaction of crystalline carbide compound and halogen element-containing gas, and performing acid treatment, and reduction reaction.

YEON S H, SHIN K H, JIN C S, JUNG K N, JEON J D, SHIM J, YANG J H, LEE B S, JEON M S, WOOK A, YEON S, SHIN K, JIN C, JUNG K, JEON J, YANG J, LEE B, AHN W