国家/地区 中国（38） 世界知识产权组织（25） 韩国（15） 美国（14） 日本（11） 台湾（9） 印度（5） 欧洲专利局（EPO）（4） 澳大利亚（2） 加拿大（2） 德国（2） 英国（2） 菲律宾（2）
IPC部 C（70）
IPC大类 C01（70） H01（64） B82（13）
C23（6） H05（6） C09（4）
G02（3） H04（3） C08（2）
G01（2）
IPC小类 C01B（70）
IPC C01B032/182（70）
发明人 LI C（5） LI Z（5） ZHANG Y（5）
LI S（4） WU J（4） XIAO D（4）
HUANG H（3） LEE E（3） YAMAZAKI S（3）
BIANZON P N P（2） BYUN K（2） CHEN Y（2）
CO F D C（2） HE M（2） HIGO D（2）
公开年 2022（39） 2021（26） 2023（5）
申请年 2021（70）
专利权人 GUANGZHOU ZH.（4） SEMICONDUCTO.（3） CTRON ADVANC.（2） FUJITSU LTD（2）
GUANGDONG BR.（2） GUANGDONG BR.（2） HUNAN BRUNP .（2） JEON O N（2）
PHILIPPINE S.（2） SAMSUNG ELEC.（2） TAIWAN SEMIC.（2）

Method for generating white light using white light-emitting quantum dots, involves mixing naphthalene and heteroatom co-doping compound, fabricating heteroatom co-doped graphene quantum dots from obtained mixture, and generating white light using obtained white-light emitting quantum dots.

SAGAR V K, BISHT P B

Graphene sheet used in e.g. positive electrode and battery, comprises layers of graphene layer, where linear distance of any two points connecting line around graphene sheet is 100-500 nm longest.

ZHONG P, MA J

Electromagnetic wave shielding sheet useful in covers of electrical and electronic products and interior interiors, comprises graphene powder mixed with silicon-based resin raw material, and discharged as molten fine fibers through nozzle.

JEON O N

Controlling stress of amorphous carbon film, comprises depositing first amorphous carbon layer on substrate, and stacking graphene layer on amorphous carbon layer, and depositing second amorphous carbon layer on graphene and carbon layer.

KIM K

Manufacturing electromagnetic wave shielding sheet useful in electric and electronic components e.g. heating mat, and electric blanket comprises mixing graphene powder and silicon-based resin, forming elastic fabric, and overlapping.

JEON O N

Heat dissipation structure for electronic device e.g. mobile phone, has heat dissipation module whose side protrudes from top surface of heat generating element, and does not contact with surface of carrier.

HE M, HUANG H, HUANG C

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Method for producing graphene electrode with cell structure used in lithium-ion battery involves using plasma sintering technology to solve problem of difficult fusion between graphene sheet, and using nano metal particles to cut and tunnel graphene under plasma atmosphere.

SUN B

Heteroatom doping in graphene by preparing mixture of graphene and doping precursor in solvent, ultrasonically processing mixture, and subjecting dispersed solution to microwave radiation to obtain layers of heteroatom doped graphene.

BHUSHAN R, THAKUR A K, KUMAR P

Semiconductor device, comprises substrate and fin structure on substrate, and includes epitaxial region, etch stop layer on epitaxial region, interlayer dielectric layer on etch stop layer, and metal contact through etch stop layer and interlayer dielectric layer.

SHEN T, HUANG J, CHEN S, LIN H, LIN C, WOON W, KHADERBAD M A