国家/地区 日本（8）
IPC部 B（8）
IPC大类 B32（8）
IPC小类 B32B（8）
IPC C01B032/20（8）
发明人
公开年 2012（2） 2014（2）
申请年 2012（2）  2013（2） 
专利权人

Composite heat transfer component used for e.g. power module, comprises plate composed of carbonaceous material comprising composite containing graphene aggregates and graphite particles, and cast metal component that covers plate surface.

MAEKAWA T, YAMASHIMA S, TAKASHI M, SUSUMU Y

Production of graphene hybrid material for electronic devices e.g. microsupercapacitor, involves exposing precursor material and associating pseudocapacitive material with laser-induced graphene which is derived from precursor material.

TOUR J M, LI L, PENG Z, ZHANG J, TOUR J

Thermal radiation film for e.g. electronic devices comprises heat-transfer layer formed by uniformly dispersed graphene microparticles and carbon nanotube.

KAGAWA S, SEIJI K

Composite material comprises graphene-type carbon layer comprising graphite-type carbon material obtained by thermally decomposing polymer within composition, provided on base material containing resin.

FUKUDA R, IHARA H, NAKASUGA A, NOZATO S, TAKAFUJI M, GANAPATHY H S

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Object useful as electrode of lithium-ion secondary battery, in electric device e.g. mobile phones, lighting devices and personal computers, and to manufacture graphene, comprises uneven surface and graphene layer over the uneven surface.

OGUNI T, OSADA T, TAKEUCHI T, NOMOTO K, KOKUNI T, NAGATA T

Nanocomposite material, useful to produce electronic device and/or structural material, comprises a substrate, optionally functionalized graphene, optional adhesive component to adhere graphene to substrate and an optional protective layer.

KINLOCH I A, YOUNG R J, NOVOSELOV K S

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W