国家/地区 日本（6） 美国（3）
IPC部 C（6） B（5） H（5）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC B82Y030/00（3） B82Y040/00（3） C01B031/02（3）
C01B032/184（3） C23C016/26（3） H01L029/786（3）
H01L051/05（3） H01L051/30（3） C23C014/06（2）
H01L021/205（2） H01L029/06（2） H01L029/16（2）
发明人 YAMAGUCHI J（2）
公开年
申请年 2012（2）  2019（2） 
专利权人 FUJITSU LTD（6）

Graphene quantum dot apparatus for e.g., photoelectric conversion device, has substrate and graphene quantum dots on substrate, with each quantum dot having armchair-type first edge parallel to first direction and armchair-type second edge.

YAMAGUCHI J

Graphene nanoribbon precursor for use in graphene nanoribbon that is utilized in electronic device for channel of FET and resonant tunneling diode, comprises substituted terphenyl compound.

YAMAGUCHI J

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Electronic device e.g. transistor, has insulating layer having space, formed on substrate, and graphene crosslinked between pair of electrodes formed on both sides of space, through space top.

SATO S

Processing of graphene sheet material during manufacture of electronic device, involves inactivating edge portion of graphene sheet material by irradiating material with ultraviolet light in atmosphere containing substance.

ASANO K