国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B031/04（2） C01B032/186（2） C23C016/56（2）
发明人 ZHANG H（5）
公开年 2017（2）
申请年 2017（2） 
专利权人

Preparing chiral graphene on gold substrate involves placing precursor molecule capable of synthesizing tetra anthracene alkene in crucible, heating, undergoing Ullman reaction and dehalogenation reaction by precursor molecules containing halogen groups and performing carbon-carbon coupling.

CAI J, ZHANG H, LU J

Device used e.g. for etching continuous substrate and graphene comprises feeding and etching device.

ZHANG H, LI T, TAN H

Chemical vapor deposition process for forming foam-like structure, involves causing decomposition of organometallic compound vapor into metal particles, and precursor gasses into graphene domains and/or hexagonal-boron nitride domains.

LOEBLEIN M, TSANG S H, TEO H T E, TSANG S, ZHANG H

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Silicon carbide substrate graphene production device includes quartz heating cavity, heating cavity inner bucket, heating chamber, opening cavity, top cover, temperature measuring window, air inlet, air outlet and cooling water exit.

GAO Y, SONG J, WANG J, ZHANG H