国家/地区 世界知识产权组织（3） 日本（2） 美国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C23C016/26（5）
发明人 MATSUMOTO T（2）
公开年 2022（5）
申请年 2021（3）  2022（2） 
专利权人 TOKYO ELECTR.（2）

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Device for preparing high-conductivity graphene metal composite material, has gas circuit mechanism for introducing gaseous carbon source and auxiliary gas into sample chamber, plasma auxiliary decomposition chamber and hot-pressure chamber.

SHAO L, LI X, ZHANG Y, LI Z, DUAN Y, SHI H, HUANG D

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H